BD13003B 1.5a , 700v npn plastic encapsulated transistor elektronische bauelemente 23-jun-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features power switching applications classification of t s product-rank bd3dd13003-a1 bd3dd13003-a2 range 2-2.5 ( s) 2.5-3 ( s) product-rank bd3dd13003-b1 bd3dd13003-b2 range 3-3.5 ( s) 3.5-4 ( s) absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 700 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 9 v collector current - continuous i c 1.5 a collector power dissipation p c 1.5 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 700 - - v i c =5ma, i e =0 collector to emitter breakdown voltage v (br)ceo 400 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 9 - - v i e =2ma, i c =0 collector cut C off current i cbo - - 1 ma v cb =700v, i e =0 collector cut C off current i ceo - - 0.5 ma v ce =400v, i b =0 emitter cut C off current i ebo - - 1 ma v eb =9v, i c =0 dc current gain h fe (1) 20 - 30 v ce =5v, i c =0.5a h fe (2) 5 - - v ce =5v, i c =1.5a collector to emitter saturation voltage v ce(sat) - - 0.6 v i c =1a, i b =250ma base to emitter saturation voltage v be(sat) - - 1.2 v i c =1a, i b =250ma transition frequency f t 5 - - mhz v ce =10v, i c =100ma, f =1mhz fall time t f - - 0.5 s i c =1a,i b1 = -i b2 =0.2a,v cc =100v storage time t s 2 - 4 s i c =250ma (ui9600) to-126 c d b a e n f l g k j h m ref. millimeter ref. millimeter min. max. min. max. a 7.40 7.80 h 1.10 1.50 b 2.50 2.90 j 0.45 0.60 c 10.60 11.00 k 0.66 0.86 d 15.30 15.70 l 2.10 2.30 e 3.70 3.90 m 1.17 1.37 f 3.90 4.10 n 3.00 3.20 g 2.29 typ.
BD13003B 1.5a , 700v npn plastic encapsulated transistor elektronische bauelemente 23-jun-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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